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KINGSTON 8GB DDR3 12800
₱2,200.00₱2,500.00 (-12%)
Product Description
This document describes ValueRAM’s 1G x 64-bit (8GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, low voltage, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: Features: JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL – 2, or CL – 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm; 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C; TCASE lt; 95C Asynchronous Reset PCB: Height 1.18” (30mm), double sided component Specification CL(IDD) : 11 cycles Row Cycle Time (tRCmin) : 48.125ns (min.) Refresh to Active/Refresh : 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) : 35ns (min.) Maximum Operating Power : (1.35V) = 2.721W* UL Rating : 94 V – 0 Operating Temperature : 0oC to 85oC Storage Temperature : -55o C to +100oC
Product Description
This document describes ValueRAM’s 1G x 64-bit (8GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, low voltage, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: Features: JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL – 2, or CL – 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm; 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C; TCASE lt; 95C Asynchronous Reset PCB: Height 1.18” (30mm), double sided component Specification CL(IDD) : 11 cycles Row Cycle Time (tRCmin) : 48.125ns (min.) Refresh to Active/Refresh : 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) : 35ns (min.) Maximum Operating Power : (1.35V) = 2.721W* UL Rating : 94 V – 0 Operating Temperature : 0oC to 85oC Storage Temperature : -55o C to +100oC
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